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Other articles related with "breakdown voltage"：
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48505 |
Min Ren(任敏), Chang-Yu Ye(叶昶宇), Jian-Yu Zhou(周建宇), Xin Zhang(张新), Fang Zheng(郑芳), Rong-Yao Ma(马荣耀), Ze-Hong Li(李泽宏), and Bo Zhang(张波) |
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Optimal impurity distribution model and experimental verification of variation of lateral doping termination |
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17306 |
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Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure |
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Chin. Phys. B
2023 Vol.32 (1): 17306-017306
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78501 |
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A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance |
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Chin. Phys. B
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47302 |
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Lateral β-Ga2O3 Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics |
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Chin. Phys. B
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47304 |
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Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench |
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Chin. Phys. B
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28501 |
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Modeling of high permittivity insulator structure with interface charge by charge compensation |
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Chin. Phys. B
2022 Vol.31 (2): 28501-028501
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67305 |
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Design and simulation of AlN-based vertical Schottky barrier diodes |
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Chin. Phys. B
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67303 |
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Terminal-optimized 700-V LDMOS with improved breakdown voltage and ESD robustness |
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Chin. Phys. B
2021 Vol.30 (6): 67303-067303
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58502 |
Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), Cheng-Hao Yu(于成浩), and Fei Cao(曹菲) |
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Improved 4H-SiC UMOSFET with super-junction shield region |
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Chin. Phys. B
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A super-junction SOI-LDMOS with low resistance electron channel |
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Chin. Phys. B
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48503 |
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Novel Si/SiC heterojunction lateral double-diffused metal-oxide semiconductor field-effect transistor with p-type buried layer breaking silicon limit |
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Chin. Phys. B
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Novel fast-switching LIGBT with P-buried layer and partial SOI |
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127701 |
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A novel high breakdown voltage and high switching speed GaN HEMT with p-GaN gate and hybrid AlGaN buffer layer for power electronics applications |
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Chin. Phys. B
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80701 |
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Simulation study of high voltage GaN MISFETs with embedded PN junction |
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57701 |
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Variable-K double trenches SOI LDMOS with high-concentration P-pillar |
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38503 |
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Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars |
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Chin. Phys. B
2020 Vol.29 (3): 38503-038503
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27301 |
Zhong-Xu Wang(王中旭), Lin Du(杜林), Jun-Wei Liu(刘俊伟), Ying Wang(王颖), Yun Jiang(江芸), Si-Wei Ji(季思蔚), Shi-Wei Dong(董士伟), Wei-Wei Chen(陈伟伟), Xiao-Hong Tan(谭骁洪), Jin-Long Li(李金龙), Xiao-Jun Li(李小军), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height |
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Chin. Phys. B
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58503 |
Zhi-Gang Wang(汪志刚), Tao Liao(廖涛), Ya-Nan Wang(王亚南) |
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Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation |
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Chin. Phys. B
2019 Vol.28 (5): 58503-058503
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37201 |
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Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate |
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Chin. Phys. B
2019 Vol.28 (3): 37201-037201
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Sheng-Lei Zhao(赵胜雷), Zhi-Zhe Wang(王之哲), Da-Zheng Chen(陈大正), Mao-Jun Wang(王茂俊), Yang Dai(戴扬), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor |
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Chin. Phys. B
2019 Vol.28 (2): 27301-027301
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Weizhong Chen(陈伟中), Yao Huang(黄垚), Lijun He(贺利军), Zhengsheng Han(韩郑生), Yi Huang(黄义) |
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A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design |
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Chin. Phys. B
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48502 |
Xue Chen(陈雪), Zhi-Gang Wang(汪志刚), Xi Wang(王喜), James B Kuo |
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Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal-oxide-semiconductor device with high-κ insulator |
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Chin. Phys. B
2018 Vol.27 (4): 48502-048502
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47305 |
Wei Mao(毛维), Hai-Yong Wang(王海永), Peng-Hao Shi(石朋毫), Xiao-Fei Wang(王晓飞), Ming Du(杜鸣), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions |
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Chin. Phys. B
2018 Vol.27 (4): 47305-047305
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17701 |
Wei Li(李威), Zhi Zheng(郑直), Zhigang Wang(汪志刚), Ping Li(李平), Xiaojun Fu(付晓君), Zhengrong He(何峥嵘), Fan Liu(刘凡), Feng Yang(杨丰), Fan Xiang(向凡), Luncai Liu(刘伦才) |
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A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer |
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Chin. Phys. B
2017 Vol.26 (1): 17701-017701
[Abstract]
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127305 |
Wei Mao(毛维), Ju-Sheng Fan(范举胜), Ming Du(杜鸣), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate |
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Chin. Phys. B
2016 Vol.25 (12): 127305-127305
[Abstract]
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87201 |
Xiao-Chuan Deng(邓小川), Xi-Xi Chen(陈茜茜), Cheng-Zhan Li(李诚瞻), Hua-Jun Shen(申华军), Jin-Ping Zhang(张金平) |
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Numerical and experimental study of the mesa configuration in high-voltage 4H-SiC PiN rectifiers |
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Chin. Phys. B
2016 Vol.25 (8): 87201-087201
[Abstract]
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77201 |
Qi Li(李琦), Hai-Ou Li(李海鸥), Ping-Jiang Huang(黄平奖), Gong-Li Xiao(肖功利), Nian-Jiong Yang(杨年炯) |
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Improving breakdown voltage performance of SOI power device with folded drift region |
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Chin. Phys. B
2016 Vol.25 (7): 77201-077201
[Abstract]
(832)
[HTML 1 KB]
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48502 |
Da Ma(马达), Xiao-Rong Luo(罗小蓉), Jie Wei(魏杰), Qiao Tan(谭桥), Kun Zhou(周坤), Jun-Feng Wu(吴俊峰) |
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Ultra-low specific on-resistance high-voltage vertical double diffusion metal-oxide-semiconductor field-effect transistor with continuous electron accumulation layer |
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Chin. Phys. B
2016 Vol.25 (4): 48502-048502
[Abstract]
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27306 |
Yan-Hui Zhang(张彦辉), Jie Wei(魏杰), Chao Yin(尹超), Qiao Tan(谭桥), Jian-Ping Liu(刘建平), Peng-Cheng Li(李鹏程), Xiao-Rong Luo(罗小蓉) |
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A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology |
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Chin. Phys. B
2016 Vol.25 (2): 27306-027306
[Abstract]
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27303 |
Jun Luo(罗俊), Sheng-Lei Zhao(赵胜雷), Min-Han Mi(宓珉瀚), Wei-Wei Chen(陈伟伟), Bin Hou(侯斌), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) |
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Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor |
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Chin. Phys. B
2016 Vol.25 (2): 27303-027303
[Abstract]
(951)
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17303 |
Wei Mao(毛维), Wei-Bo She(佘伟波), Cui Yang(杨翠), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Yue Hao(郝跃) |
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Reverse blocking characteristics and mechanisms in Schottky-drainAlGaN/GaN HEMT with a drain field plate and floating field plates |
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Chin. Phys. B
2016 Vol.25 (1): 17303-017303
[Abstract]
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47304 |
Li Peng-Cheng (李鹏程), Luo Xiao-Rong (罗小蓉), Luo Yin-Chun (罗尹春), Zhou Kun (周坤), Shi Xian-Long (石先龙), Zhang Yan-Hui (张彦辉), Lv Meng-Shan (吕孟山) |
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An ultra-low specific on-resistance trench LDMOS with a U-shaped gate and accumulation layer |
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Chin. Phys. B
2015 Vol.24 (4): 47304-047304
[Abstract]
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45101 |
Liu Xing-Jian (刘兴建), He Li-Ming (何立明), Yu Jin-Lu (于锦禄), Zhang Hua-Lei (张华磊) |
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Experimental investigation of effects of airflows on plasma-assisted combustion actuator characteristics |
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Chin. Phys. B
2015 Vol.24 (4): 45101-045101
[Abstract]
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37203 |
Li Qi (李琦), Li Hai-Ou (李海鸥), Tang Ning (唐宁), Zhai Jiang-Hui (翟江辉), Song Shu-Xiang (宋树祥) |
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New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage |
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Chin. Phys. B
2015 Vol.24 (3): 37203-037203
[Abstract]
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28502 |
Zhang Jun (张珺), Guo Yu-Feng (郭宇锋), Xu Yue (徐跃), Lin Hong (林宏), Yang Hui (杨慧), Hong Yang (洪洋), Yao Jia-Fei (姚佳飞) |
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One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation |
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Chin. Phys. B
2015 Vol.24 (2): 28502-028502
[Abstract]
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127303 |
Shi Xian-Long (石先龙), Luo Xiao-Rong (罗小蓉), Wei Jie (魏杰), Tan Qiao (谭桥), Liu Jian-Ping (刘建平), Xu Qing (徐青), Li Peng-Cheng (李鹏程), Tian Rui-Chao (田瑞超), Ma Da (马达) |
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A novel LDMOS with a junction field plate and a partial N-buried layer |
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Chin. Phys. B
2014 Vol.23 (12): 127303-127303
[Abstract]
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[HTML 1 KB]
[PDF 620 KB]
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128501 |
Hu Xia-Rong (胡夏融), Lü Rui (吕瑞) |
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An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS |
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Chin. Phys. B
2014 Vol.23 (12): 128501-128501
[Abstract]
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[HTML 1 KB]
[PDF 325 KB]
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114402 |
Fu Qiang (付强), Zhang Wan-Rong (张万荣), Jin Dong-Yue (金冬月), Ding Chun-Bao (丁春宝), Zhao Yan-Xiao (赵彦晓), Lu Dong (鲁东) |
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Collector optimization for tradeoff between breakdown voltage and cut-off frequency in SiGe HBT |
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Chin. Phys. B
2014 Vol.23 (11): 114402-114402
[Abstract]
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[HTML 1 KB]
[PDF 1131 KB]
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77306 |
Luo Yin-Chun (罗尹春), Luo Xiao-Rong (罗小蓉), Hu Gang-Yi (胡刚毅), Fan Yuan-Hang (范远航), Li Peng-Cheng (李鹏程), Wei Jie (魏杰), Tan Qiao (谭桥), Zhang Bo (张波) |
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A low specific on-resistance SOI LDMOS with a novel junction field plate |
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Chin. Phys. B
2014 Vol.23 (7): 77306-077306
[Abstract]
(845)
[HTML 1 KB]
[PDF 451 KB]
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77304 |
Mi Min-Han (宓珉瀚), Zhang Kai (张凯), Chen Xing (陈兴), Zhao Sheng-Lei (赵胜雷), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage |
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Chin. Phys. B
2014 Vol.23 (7): 77304-077304
[Abstract]
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[HTML 1 KB]
[PDF 433 KB]
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67101 |
Hu Sheng-Dong (胡盛东), Wu Xing-He (武星河), Zhu Zhi (朱志), Jin Jing-Jing (金晶晶), Chen Yin-Hui (陈银晖) |
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Partial-SOI high voltage laterally double-diffused MOS with a partially buried n+-layer |
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Chin. Phys. B
2014 Vol.23 (6): 67101-067101
[Abstract]
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57203 |
Wang Xiang-Dong (王向东), Deng Xiao-Chuan (邓小川), Wang Yong-Wei (王永维), Wang Yong (王勇), Wen Yi (文译), Zhang Bo (张波) |
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Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring |
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Chin. Phys. B
2014 Vol.23 (5): 57203-057203
[Abstract]
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38503 |
Wu Wei (伍伟), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Fang Jian (方健), Li Zhao-Ji (李肇基) |
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Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer |
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Chin. Phys. B
2014 Vol.23 (3): 38503-038503
[Abstract]
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128503 |
Zhong Ying-Hui (钟英辉), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Wang Xian-Tai (王显泰), Lü Hong-Liang (吕红亮), Liu Xin-Yu (刘新宇), Jin Zhi (金智) |
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0.15-μm T-gate In0.52Al0.48As/In0.53Ga0.47As InP-based HEMT with fmax of 390 GHz |
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Chin. Phys. B
2013 Vol.22 (12): 128503-128503
[Abstract]
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[HTML 1 KB]
[PDF 1012 KB]
(489)
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118502 |
Fan Jie (范杰), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基) |
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High-voltage SOI lateral MOSFET with a dual vertical field plate |
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Chin. Phys. B
2013 Vol.22 (11): 118502-118502
[Abstract]
(692)
[HTML 1 KB]
[PDF 451 KB]
(736)
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97201 |
Deng Yong-Hui (邓永辉), Xie Gang (谢刚), Wang Tao (汪涛), Sheng Kuang (盛况) |
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A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain |
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Chin. Phys. B
2013 Vol.22 (9): 97201-097201
[Abstract]
(707)
[HTML 1 KB]
[PDF 643 KB]
(896)
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67306 |
Zhou Kun (周坤), Luo Xiao-Rong (罗小蓉), Fan Yuan-Hang (范远航), Luo Yin-Chun (罗尹春), Hu Xia-Rong (胡夏融), Zhang Bo (张波) |
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A low on-resistance buried current path SOI p-channel LDMOS compatible with n-channel LDMOS |
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Chin. Phys. B
2013 Vol.22 (6): 67306-067306
[Abstract]
(727)
[HTML 1 KB]
[PDF 938 KB]
(780)
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68501 |
Wu Wei (伍伟), Zhang Bo (张波), Fang Jian (方健), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基) |
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High voltage super-junction lateral double diffused metal-oxide semiconductor with partial lightly doped pillar |
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Chin. Phys. B
2013 Vol.22 (6): 68501-068501
[Abstract]
(639)
[HTML 1 KB]
[PDF 793 KB]
(966)
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58501 |
Hua Ting-Ting (花婷婷), Guo Yu-Feng (郭宇锋), Yu Ying (于映), Gene Sheu, Jian Tong (蹇彤), Yao Jia-Fei (姚佳飞) |
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Analytical models of lateral power devices with arbitrary vertical doping profiles in drift region |
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Chin. Phys. B
2013 Vol.22 (5): 58501-058501
[Abstract]
(573)
[HTML 1 KB]
[PDF 912 KB]
(735)
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48501 |
Fan Jie (范杰), Wang Zhi-Gang (汪志刚), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉) |
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Dual-gate lateral double-diffused metal–oxide semiconductor with ultra-low specific on-resistance |
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Chin. Phys. B
2013 Vol.22 (4): 48501-048501
[Abstract]
(793)
[HTML 1 KB]
[PDF 592 KB]
(1394)
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47701 |
Zheng Zhi (郑直), Li Wei (李威), Li Ping (李平) |
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Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect |
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Chin. Phys. B
2013 Vol.22 (4): 47701-047701
[Abstract]
(779)
[HTML 1 KB]
[PDF 967 KB]
(794)
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27303 |
Luo Xiao-Rong (罗小蓉), Wang Qi (王琦), Yao Guo-Liang (姚国亮), Wang Yuan-Gang (王元刚), Lei Tian-Fei (雷天飞), Wang Pei (王沛), Jiang Yong-Heng (蒋永恒), Zhou Kun (周坤), Zhang Bo (张波) |
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A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pitch |
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Chin. Phys. B
2013 Vol.22 (2): 27303-027303
[Abstract]
(778)
[HTML 1 KB]
[PDF 809 KB]
(833)
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27305 |
Wang Pei (王沛), Luo Xiao-Rong (罗小蓉), Jiang Yong-Heng (蒋永恒), Wang Qi (王琦), Zhou Kun (周坤), Wu Li-Juan (吴丽娟), Wang Xiao-Wei (王骁玮), Cai Jin-Yong (蔡金勇), Luo Yin-Chun (罗尹春), Fan Ye (范叶), Hu Xia-Rong (胡夏融), Fan Yuan-Hang (范远航), Wei Jie (魏杰), Zhang Bo (张波) |
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Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench |
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Chin. Phys. B
2013 Vol.22 (2): 27305-027305
[Abstract]
(760)
[HTML 1 KB]
[PDF 535 KB]
(753)
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26103 |
Xie Gang (谢刚), Tang Cen (汤岑), Wang Tao (汪涛), Guo Qing (郭清), Zhang Bo (张波), Sheng Kuang (盛况), Wai Tung Ng |
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An AlGaN/GaN HEMT with enhanced breakdown and near-zero breakdown voltage temperature coefficient |
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Chin. Phys. B
2013 Vol.22 (2): 26103-026103
[Abstract]
(1062)
[HTML 1 KB]
[PDF 1199 KB]
(1805)
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27304 |
Luo Xiao-Rong (罗小蓉), Luo Yin-Chun (罗尹春), Fan Ye (范叶), Hu Gang-Yi (胡刚毅), Wang Xiao-Wei (王骁玮), Zhang Zheng-Yuan (张正元), Fan Yuan-Hang (范远航), Cai Jin-Yong (蔡金勇), Wang Pei (王沛), Zhou Kun (周坤) |
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A low specific on-resistance SOI MOSFET with dual gates and recessed drain |
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Chin. Phys. B
2013 Vol.22 (2): 27304-027304
[Abstract]
(873)
[HTML 1 KB]
[PDF 684 KB]
(735)
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128503 |
Wang Ying (王颖), Li Ting (李婷), Cao Fei (曹菲), Shao Lei (邵雷), Chen Yu-Xian (陈宇贤) |
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Junction barrier Schottky rectifier with improved P-well region |
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Chin. Phys. B
2012 Vol.21 (12): 128503-128503
[Abstract]
(1062)
[HTML 1 KB]
[PDF 359 KB]
(792)
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108502 |
Qiao Ming (乔明), Zhuang Xiang (庄翔), Wu Li-Juan (吴丽娟), Zhang Wen-Tong (章文通), Wen Heng-Juan (温恒娟), Zhang Bo (张波), Li Zhao-Ji (李肇基) |
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Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates |
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Chin. Phys. B
2012 Vol.21 (10): 108502-108502
[Abstract]
(1015)
[HTML 1 KB]
[PDF 2606 KB]
(1585)
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88502 |
Zhang Qian (张倩), Zhang Yu-Ming (张玉明), Yuan Lei (元磊), Zhang Yi-Men (张义门), Tang Xiao-Yan (汤晓燕), Song Qing-Wen (宋庆文 ) |
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Fabrication and characterization of 4H–SiC bipolar junction transistor with double base epilayer |
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Chin. Phys. B
2012 Vol.21 (8): 88502-088502
[Abstract]
(1391)
[HTML 1 KB]
[PDF 907 KB]
(1218)
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86105 |
Xie Gang (谢刚), Edward Xu, Niloufar Hashemi, Zhang Bo (张波), Fred Y. Fu, Wai Tung Ng |
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An AlGaN/GaN HEMT with reduced surface electric field and an improved breakdown voltage |
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Chin. Phys. B
2012 Vol.21 (8): 86105-086105
[Abstract]
(1406)
[HTML 1 KB]
[PDF 1274 KB]
(1636)
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78502 |
Hu Xia-Rong(胡夏融), Zhang Bo(张波), Luo Xiao-Rong(罗小蓉), Wang Yuan-Gang(王元刚), Lei Tian-Fei(雷天飞), and Li Zhao-Ji(李肇基) |
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A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS |
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Chin. Phys. B
2012 Vol.21 (7): 78502-078502
[Abstract]
(1456)
[HTML 1 KB]
[PDF 152 KB]
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77101 |
Zhang Wen-Tong(章文通), Wu Li-Juan(吴丽娟), Qiao Ming(乔明) Luo Xiao-Rong(罗小蓉), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
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Novel high-voltage power lateral MOSFET with adaptive buried electrodes |
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Chin. Phys. B
2012 Vol.21 (7): 77101-077101
[Abstract]
(1367)
[HTML 1 KB]
[PDF 1101 KB]
(650)
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68504 |
Zhang Jin-Ping(张金平), Li Ze-Hong(李泽宏), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
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A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer |
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Chin. Phys. B
2012 Vol.21 (6): 68504-068504
[Abstract]
(1369)
[HTML 1 KB]
[PDF 801 KB]
(1099)
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68501 |
Luo Xiao-Rong(罗小蓉), Yao Guo-Liang(姚国亮), Zhang Zheng-Yuan(张正元), Jiang Yong-Heng(蒋永恒), Zhou Kun(周坤), Wang Pei(王沛), Wang Yuan-Gang(王元刚), Lei Tian-Fei(雷天飞), Zhang Yun-Xuan(张云轩), and Wei Jie(魏杰) |
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A low on-resistance triple RESURF SOI LDMOS with planar and trench gate integration |
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Chin. Phys. B
2012 Vol.21 (6): 68501-068501
[Abstract]
(1685)
[HTML 1 KB]
[PDF 297 KB]
(1688)
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37305 |
Zhuang Xiang(庄翔), Qiao Ming(乔明), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
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Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel lateral double-diffused metal oxide semiconductor |
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Chin. Phys. B
2012 Vol.21 (3): 37305-037305
[Abstract]
(1107)
[HTML 1 KB]
[PDF 1679 KB]
(24119)
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27101 |
Hu Sheng-Dong(胡盛东), Wu Li-Juan(吴丽娟), Zhou Jian-Lin(周建林), Gan Ping(甘平), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
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Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n+-layer |
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Chin. Phys. B
2012 Vol.21 (2): 27101-027101
[Abstract]
(1191)
[HTML 1 KB]
[PDF 580 KB]
(636)
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87101 |
Wu Li-Juan(吴丽娟), Hu Sheng-Dong(胡盛东), Zhang Bo(张波), Luo Xiao-Rong(罗小蓉), and Li Zhao-Ji(李肇基) |
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A–188 V 7.2 Ω·mm2, P-channel high voltage device formed on an epitaxy-SIMOX substrate |
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Chin. Phys. B
2011 Vol.20 (8): 87101-087101
[Abstract]
(1495)
[HTML 1 KB]
[PDF 307 KB]
(749)
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77304 |
Wang Yuan-Gang(王元刚), Luo Xiao-Rong(罗小蓉), Ge Rui(葛锐), Wu Li-Juan(吴丽娟), Chen Xi（陈曦), Yao Guo-Liang(姚国亮), Lei Tian-Fei(雷天飞), Wang Qi(王琦), Fan Jie(范杰), and Hu Xia-Rong(胡夏融) |
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Compound buried layer SOI high voltage device with a step buried oxide |
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Chin. Phys. B
2011 Vol.20 (7): 77304-077304
[Abstract]
(1418)
[HTML 0 KB]
[PDF 1859 KB]
(854)
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67102 |
Zhang Fa-Sheng (张发生), Li Xin-Ran (李欣然) |
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Research on high-voltage 4H–SiC P–i–N diode with planar edge junction termination techniques |
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Chin. Phys. B
2011 Vol.20 (6): 67102-067102
[Abstract]
(1402)
[HTML 1 KB]
[PDF 473 KB]
(1159)
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28501 |
Luo Xiao-Rong(罗小蓉), Yao Guo-Liang(姚国亮), Chen Xi(陈曦), Wang Qi(王琦), Ge Rui(葛瑞), and Florin Udrea |
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Ultra-low on-resistance high voltage (>600 V) SOI MOSFET with a reduced cell pitch |
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Chin. Phys. B
2011 Vol.20 (2): 28501-028501
[Abstract]
(1431)
[HTML 1 KB]
[PDF 1846 KB]
(2304)
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27101 |
Wu Li-Juan(吴丽娟), Hu Sheng-Dong(胡盛东), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
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Novel high-voltage power device based on self-adaptive interface charge |
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Chin. Phys. B
2011 Vol.20 (2): 27101-027101
[Abstract]
(1374)
[HTML 1 KB]
[PDF 1220 KB]
(875)
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128501 |
Ren Min(任敏), Li Ze-Hong(李泽宏), Liu Xiao-Long(刘小龙), Xie Jia-Xiong(谢加雄), Deng Guang-Min(邓光敏), and Zhang Bo(张波) |
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A novel planar vertical double-diffused metal-oxide- semiconductor field-effect transistor with inhomogeneous floating islands |
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Chin. Phys. B
2011 Vol.20 (12): 128501-128501
[Abstract]
(1298)
[HTML 1 KB]
[PDF 350 KB]
(1046)
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118401 |
Huang Jian-Hua(黄健华), Lü Hong-Liang(吕红亮), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门),Tang Xiao-Yan(汤晓燕), Chen Feng-Ping(陈丰平), and Song Qing-Wen(宋庆文) |
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Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode |
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Chin. Phys. B
2011 Vol.20 (11): 118401-118401
[Abstract]
(1482)
[HTML 0 KB]
[PDF 304 KB]
(1061)
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117202 |
Li Qi(李琦), Zhu Jin-Luan(朱金鸾),Wang Wei-Dong(王卫东), and Wei Xue-Ming(韦雪明) |
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A novel thin drift region device with field limiting rings in substrate |
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Chin. Phys. B
2011 Vol.20 (11): 117202-117202
[Abstract]
(1367)
[HTML 0 KB]
[PDF 214 KB]
(669)
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107101 |
Wu Li-Juan(吴丽娟), Hu Sheng-Dong(胡盛东), Luo Xiao-Rong(罗小蓉), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
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Partial-SOI high voltage P-channel LDMOS with interface accumulation holes |
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Chin. Phys. B
2011 Vol.20 (10): 107101-107101
[Abstract]
(1594)
[HTML 1 KB]
[PDF 376 KB]
(854)
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87202 |
Song Qing-Wen(宋庆文), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Zhang Qian(张倩), and LÜ Hong-Liang(吕红亮) |
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Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region |
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Chin. Phys. B
2010 Vol.19 (8): 87202-087202
[Abstract]
(1827)
[HTML 0 KB]
[PDF 303 KB]
(886)
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77306 |
Luo Xiao-Rong (罗小蓉), Wang Yuan-Gang (王元刚), Deng Hao (邓浩), Florin Udrea |
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A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer |
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Chin. Phys. B
2010 Vol.19 (7): 77306-077306
[Abstract]
(1487)
[HTML 1 KB]
[PDF 4242 KB]
(992)
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37303 |
Hu Sheng-Dong(胡盛东), Zhang Bo(张波), Li Zhao-Ji(李肇基), and Luo Xiao-Rong(罗小蓉) |
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A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device |
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Chin. Phys. B
2010 Vol.19 (3): 37303-037303
[Abstract]
(1729)
[HTML 1 KB]
[PDF 1758 KB]
(1253)
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315 |
Hu Sheng-Dong(胡盛东), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
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A new analytical model of high voltage silicon on insulator (SOI) thin film devices |
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Chin. Phys. B
2009 Vol.18 (1): 315-319
[Abstract]
(1159)
[HTML 1 KB]
[PDF 672 KB]
(1125)
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3754 |
Duan Bao-Xing(段宝兴), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
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New CMOS compatible super junction LDMOST with n-type buried layer |
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Chin. Phys. B
2007 Vol.16 (12): 3754-3759
[Abstract]
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